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Information × Registration Number 0206U002389, 0103U001899 , R & D reports Title Development of the physical concept available for the control of radiation-induced rearrangement in wide-gap crystals popup.stage_title Head Pavlyk Bohdan Vasylyovych, Registration Date 07-02-2006 Organization Ivan Franko Lviv National University popup.description2 The peculiarities of relaxation processes in irradiated cesium halide single crystals doped witn anion and cation impurities have been studied. The radiation-induced structure rearrangement at the initial stage of irrradiation is ascertained. The mechanisms responsible for relaxation processes have been proposed depending both on gamma-irradiation dose value and type of impurity. The effect of low-dose X-ray irradiation on the change of electrophysical parameters of basal faces of CdS near-surface layer has been investigated. The physical and mathematical models of radiation-stimulated processes of defect structure rearrangement of CdS single crystals have been proposed. Product Description popup.authors popup.nrat_date 2020-04-02 Close