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Information × Registration Number 0206U002395, 0103U001917 , R & D reports Title Detectors of infrared and ionizing radiation on the basis of CdHgTe epitaxial structures popup.stage_title Head Pysarevsky Volodymyr, Registration Date 07-02-2006 Organization Ivan Franko Lviv National University popup.description2 On the basis of results of theoretical modeling technological aspects of evaporation-condensation-diffusion (ECD) epitaxy with using two-zone and two-stage techique have been developed. It has been obtained single crystal layers with mirrow-like surface and the electrophysical parameters allowing to produce IR detectors. Structural perfection of the epitaxial layers was verified by STM microscopy. For fabrication of photosensitive structures the methods of RF - mercury glow dicharge and laser deposition have been modified. Efficiency of the proposed methods for obtaining CMT thin layers, separation of photosensitive elements, as well as modification of initial material properties have been proved. The influence of radiation defects arising in near-surface regions after arsenic ion implantation on the high-temperature doping and ECD growth of CMT graded-band-gap layers has been studied. Sb doping of CMTepitaxial layers during the isothermal growth from vapour phase has been investigated. It has been carried out a comparative analysis of the results of SIMS, optical and galvano-magnetic measurements of Sb doped epitaxial layers of MCT.On the basis of results of modeling of diffusion processes in the graded-band-gap epitaxial layers techniques of formation of diffusion p-n junctions. Using the developed technologies of CMT epitaxial layer growth and doping p-i-n detectors of ionizing radiation have been manufactured. Theoretically, it has been shown the possibility of improvement of IR detector characteristics by means of the use of CMT material with controlled band gap gradient, namely, widening f the range of spectral sensitivity, increasing quantum efficiency, reducing the reverse current, as well as at the expense of realization of new physical effect - wide band negative luminescence. Product Description popup.authors popup.nrat_date 2020-04-02 Close