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Information × Registration Number 0206U005741, 0103U008385 , R & D reports Title Ferroelectric thin films on the base of BST for high-frequency applications popup.stage_title Head Glinchuk Maya Davidovna, Registration Date 16-05-2006 Organization I.N.Frantsevich Institute for Probmens of Materials Sciences Ukrainian Academy of Science popup.description2 Thin films with high dielectric constant 300-400 are investigated by ESR method. It is shown that available Co ions constitute shallow impurity levels in band gap of BST, whereas Mn and Fe ions are active at room temperature and influence essentially on the film properties. Ті3+-VO centers in textured BaTiO3 films are investigated by ESR method. It is shown, that the center have tetragonal symmetry. This ESR signal is observed only in BaTiO3 films and is not in bulk materials. Theoretic calculations show that functional dependence of all physical values obtained from free energy on temperature do not change. It is shown, that phase transition can exist at definite film thickness at fixed temperature and all physical values depend on the film thickness and have peculiarities at the critical thickness. Product Description popup.authors popup.nrat_date 2020-04-02 Close