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Information × Registration Number 0206U005985, 0103U003637 , R & D reports Title Influence of radiation defects on electrophysical properties of detectors materials and devices on their base. popup.stage_title Head Litovchenko Piotr Grigorievich, Registration Date 17-08-2006 Organization Institute For Nuclear Research Of National Academy Of Sciences Of Ukraine popup.description2 The investigation of the radiation hardness of n-Si with low and high concentration of oxygen at the irradiation great doses of fast-file neutrons of WWR-M reactor were carried out. The model for explanation of the dose dependence for n-p conversion was proposed. After irradiation by 6,8 MeV protons and annealing of monocrystal silicon the creation of a number of centers is found, whose composition includes hydrogen fixed on the broken bonds of radiation defects. It was indicated that high temperature treatment of n-Si especially at 900oC creates the system of relative paramagnetic centers.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close