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Information × Registration Number 0206U009092, 0105U008775 , R & D reports Title Development and high technology production implementation of millimeter-wave (90-94 GHz) Silicon IMPATT diodes with advanced energy characteristics. popup.stage_title Head Boltovetc Nikolay, Registration Date 21-12-2006 Organization State Scientific-Reseach Institute "Orion" popup.description2 The working complete set of design and technological documentation is developed on the production of Si pulse mm-wave (90-94) GHz IMPATT-diodes with enhanced power descriptions. Diodes types are on the value of pulse output power as 5 W; 10 W; 12 W and 15 W in the frequency ranges of 90-94 GHz. Development is implemented in State Research Institute "Orion" (Kyiv). Diodes are intended for application in the communication, radio-location, navigation systems and the special equipment. Product Description popup.authors popup.nrat_date 2020-04-02 Close
R & D report
Development and high technology production implementation of millimeter-wave (90-94 GHz) Silicon IMPATT diodes with advanced energy characteristics.
Head: Boltovetc Nikolay. Development and high technology production implementation of millimeter-wave (90-94 GHz) Silicon IMPATT diodes with advanced energy characteristics.. (popup.stage: ). State Scientific-Reseach Institute "Orion". № 0206U009092
1 documents found

Updated: 2026-03-22


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