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Information × Registration Number 0206U009616, 0104U009882 , R & D reports Title Synthesis nanostructures at low temperatures on the basis of materials of silicon, nitrides india and gallium popup.stage_title Head Yakimenko Yuri Ivanovich, Registration Date 29-12-2006 Organization Research Institute of Applied Electronics of National Technical University of Ukraine "KPI" popup.description2 The technology of thin silicon films, with nanocrystall inclusions, structural properties management is developed.The dependences of electrophysical, optical, thermoelectric, photo-electric and radiating properties by the sizes of nanoinclusions, amorphous and nanocrustall phases sharing are investigated. It was established the influence of the Ytrium doping for of the band gap width. Also, was synthesized not alloyed and europium alloyed a nanocrystall silicon films by a method of electron beam evaporation. Are createdthe geterostructures, which possess a sharply expressed diode characteristics, with the maximal photosensivity in a visible range of a spectrum (54 mA/lm V) and in a ultra-violet range on the 350 nanometers wavelength. The technological process of nitride films synthesis is optimized by method RF- magnetron sputtering. The received results are recommended to using for development anew optoelectronnic devices, photo-electric converters and sensor systems. Product Description popup.authors popup.nrat_date 2020-04-02 Close