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Information × Registration Number 0207U000557, 0106U005879 , R & D reports Title Development of the technique for measurement and investigation parameters of high-temperature emitters for far spectral range (8-14 mkm) popup.stage_title Head Malyutenko V.K., Registration Date 26-01-2007 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 The infrared emitters on medial (3-5мкм) and far-range (8-12мкм) of the spectrum have wide use in different directions. The quantum yield of photon devices at room (and is higher) temperature too low for their practical application (especially it concerns far-wave IR range). The thermal emitters are capable to radiate major powers, but their key deficiency is large time constant. In this work we presents the new type of IR emitters made on Sі, Ge and GaAs p-n junction. The principle of operation of emitters is grounded on modulation of a thermal radiation behind edge of fundamental absorption at change of concentration of free carriers (injection through p-n transition) in base of the device. The spatial distributions of power and quick action of the device were carried out measuring spectral dependences of radiation. The emitter, designed in operation, combines in itself advantages photon (quick action, the time constant > 100 mks) and thermal (high power of radiation at Т>300 K) emitters and demonstrates highest energy conversion efficiency (0.88 %) among emitters on far IR range. Product Description popup.authors popup.nrat_date 2020-04-02 Close