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Information × Registration Number 0207U004080, 0104U002304 , R & D reports Title The investigation of electron irradiation influence on properties of indium antimonide microcrystals doped by lanthanides popup.stage_title Head Bolshakova I.A., Registration Date 26-01-2007 Organization Lviv Polytechnic National University popup.description2 The objective of the present research and development work is to develop the technology of InSb microcystals' doping by the elements of lanthanide series and by the doping complex consisting of rare earth elements and group IV elements when growing from the gas phase, as well as to investigate the effect of electron irradiation on the properties of doped InSb microcrystals for the creation of the based-on radiation hard microsensors of magnetic field. As a result of the performed research, for the first time the indium antimonide microcrystals doped by the rare earth elements were obtained from the gas phase; the influence of the introduced rare earth impurity amount on the basic kinetic parameters and conductivity type of the grown crystals was determined; the possibility to control the charge carrier concentration in the crystals when using the impurity complexes consisting of rare earth elements and group IV elements as well as the increase of electron irradiated InSb microcrystals' stability were shown. Received results have both scientific and practical value, and will be used for the manufacturing of magnetic field sensors to be applied in the outer space. Product Description popup.authors popup.nrat_date 2020-04-02 Close