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Information × Registration Number 0207U004457, 0100U001436 , R & D reports Title Defect configurations in silicon under high dose ion implantation. popup.stage_title Head Oleynikov A.I., Registration Date 27-03-2007 Organization Kryviy Rih State Pedagogical University popup.description2 It has performed ab initio pseudopotensial and electron density functional calculations of the new defect configurations and of the structural transformation rules; of the phase conversions and the typical defect configurations which corresponds to the state that precedes amorphous transition. Product Description popup.authors popup.nrat_date 2020-04-02 Close