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Information × Registration Number 0207U005010, 0101U008024 , R & D reports Title Resonant states and infrared emission in quantum well semiconductor popup.stage_title Head Tulupenko Victor N., Registration Date 23-02-2007 Organization Donbass State Engineering Academy popup.description2 Research objects are samples of bulk Ge and Si with hole condactivity and acceptor concentration 10 14 -10 15 cm -3 as well as two series of MQW Si0,88Ge0,12/Si heterostructures that differ from each other by the position of the delta-layer of Boron (samples of 609 series are doped to the center of QW and samples of 611 series are doped to the edge). Impurity concentration in delta-layers is 1,3*1012 cm-2; background Boron impurity concentration in both kinds of structures is ? 1014 cm-3. The purpose of the work is to found the conditions of infrared generation in semiconductor structures. Research methods are theoretical and experimental: Fourier-spectrometry, photoconductivity measurements, current-voltage measurements, calculations of the fundamental characteristics of the resonant impurity states and light absorption coefficient Product Description popup.authors popup.nrat_date 2020-04-02 Close