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Information × Registration Number 0207U006973, 0107U010163 , R & D reports Title Modelling and properties of defective structure without dislocation monocrystals of silicon popup.stage_title Head Talanin V.I., Registration Date 21-11-2007 Organization University of the humanities Zaporizhya institute of state and municipal goverment popup.description2 The new model is offered, which one esteems a defect formation in without-dislocation mono-crystal of silicon and the impurity purely punctated a defect " bases on a fundamental principle of interplay ". The simulation on the basis of heterogenous gear of formation of growth microflaws actuates, as a special case, model of dynamics punctated of defects (interplay between own punctated by defects). The outcomes of activity can be used on firms and entities, which one are engaged in mining both extension of semiconducting frames and devices on the basis without-disposition of silicon5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close