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Information × Registration Number 0207U008302, 0107U003874 , R & D reports Title Semiconductor materials for quantum information processing and quantum computing popup.stage_title Head Tanasyuk Yuliya Volodymyrivna, Registration Date 06-12-2007 Organization Yuri Fedkovych Chernivtsi National University popup.description2 In the given research work the decoherence in semiconductor alloys on the basis of silicon is studied for the first time from the point of view of their implementation in quantum computing. Heterostructures of SiGe with quantum wells showed that decoherence allowing for spin relaxation due to optical phonon emission or absorption doesn't influence greatly on quantum information processing, when well designed qubits are used. The mentioned mechanism of spin relaxation is prevailing for electrons at such donor related states as Si:P. Si-enriched structures with uniaxial tension turned out to enhance valley degeneration. Sufficient level of tension is achieved in all structures with silicon enriched active layer, positioned between Ge-riched layers. Active layers should be thin enough to avoid dislocation-related relaxation. Relaxation time is reduced with decrease in germanium content in Si1-xGex alloys. Low concentration of magnetic component will negatively influence the spin relaxation. Product Description popup.authors popup.nrat_date 2020-04-02 Close