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Information × Registration Number 0207U008455, 0106U009580 , R & D reports Title The investigation of the external and internal factors' effects on the characteristics of the magnetic field microsensors popup.stage_title Head Bolshakova Inessa Antonivna, Доктор технічних наук Registration Date 12-12-2007 Organization Lviv Polytechnic National University popup.description2 InSb and InAs microcrystal based magnetic field microsensors for extreme operation conditions have been obtained. For this purpose the following works have been fulfilled: the model of physical-chemical processes taking place during the growth of InSb and InAs semiconductor microcrystals by means of gas-transport reactions has been created; optimal technological parameters of their growth have been determined; InSb and InAs microcrystals doped with Sn, Al and Cr impurities in the process of growth have been obtained; optimal parameters of the magnetic field microsensors based on the grown InSb and InAs microcrystals in wide temperature and magnetic field induction range have been determined; recommendations concerning the application of microcrystals for the magnetic field sensors have been produced Product Description popup.authors popup.nrat_date 2020-04-02 Close