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Information × Registration Number 0207U008711, 0105U000631 , R & D reports Title Study of processes of localisation and scattering of electron excitations in semiconductor nanoparticles popup.stage_title Head Blonskyy I.V., Registration Date 19-12-2007 Organization Institute of physics NASU popup.description2 Peculiarities of the transport of the electron excitations in structurally inhomogeneous semiconductor quantum dots are studied by means of photo- thermo-, and tunneling luminescence along with their manifestation in the recombination processes. A theoretical model of long-term kinetics of luminescence of the structurally inhomogeneous quantum dots and their gatherings is developed. In the quantum wires of irregular width, the effect of charge carriers localization by the “topological traps” is studied. The size dependence of efficiency of the Auger scattering of charge carriers in gatherings of Si dots of various sizes is analyzed. A theoretical model of luminescence of the nano-structured Si is constructed based on the kinetic description5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close