1 documents found
Information × Registration Number 0208U000394, 0105U006580 , R & D reports Title Development of technology and production modernization of two-terminal GaAs oscillating devices with heightenend energetics for the 30-100 GHz frequency range. popup.stage_title Head Ivanov Vladimir, Registration Date 25-01-2008 Organization State Scientific-Reseach Institute "Orion" popup.description2 A construction and technology GaAs Gunn diodes production are developed with enhanced energy characteristices (enhanced efficiency from 1% to 6%) due to creation of metallic cathode contact injected the hot electrons. This Gunn diodes infended for production of 30-100 GHz of perspective sources. Development is executed on the epitaxial structures with the opened active layer on which a metallic contact is formed and which is a cathode electrode. Product Description popup.authors popup.nrat_date 2020-04-02 Close
R & D report
Development of technology and production modernization of two-terminal GaAs oscillating devices with heightenend energetics for the 30-100 GHz frequency range.
Head: Ivanov Vladimir. Development of technology and production modernization of two-terminal GaAs oscillating devices with heightenend energetics for the 30-100 GHz frequency range.. (popup.stage: ). State Scientific-Reseach Institute "Orion". № 0208U000394
1 documents found

Updated: 2026-03-27


Роздрукувати цю сторінку