1 documents found
Information × Registration Number 0208U004965, 0107U007684 , R & D reports Title Research and Development of Amorphous SiXC1-X:H and Rare-Earth Doped Amorphous Si(x)C(1-x):H films on Crystalline Si for Light-Emitting Devices popup.stage_title Head Nazarov Alexei Nikolaevich, Registration Date 25-12-2008 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Investigation of the photo- and electroluminescent properties of the amorphous a-SiC:H films, in particular, the effect of oxidation on light emitting properties. Development and optimization of the technology of fabrication of white light emitting structures fabricated on the base of a-SiC:H/Si and a-Si:O:C:H/Si. . Product Description popup.authors popup.nrat_date 2020-04-02 Close
R & D report
Research and Development of Amorphous SiXC1-X:H and Rare-Earth Doped Amorphous Si(x)C(1-x):H films on Crystalline Si for Light-Emitting Devices
Head: Nazarov Alexei Nikolaevich. Research and Development of Amorphous SiXC1-X:H and Rare-Earth Doped Amorphous Si(x)C(1-x):H films on Crystalline Si for Light-Emitting Devices. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0208U004965
1 documents found

Updated: 2026-03-25


Роздрукувати цю сторінку