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Information × Registration Number 0208U004983, 0107U002392 , R & D reports Title Research of modern nanoscaled semiconductor structures and devices for development and implementation the technologies of its manufacturing popup.stage_title Head Timofeev I. Vladymir, Registration Date 25-12-2008 Organization Research Institute of Applied Electronics of Natoinal Technical University of Ukraine "KPI" popup.description2 Subject of work is researching of physical processes and physicotopological modelling of nanosructure electronic devices: multilayered heterotransistors structures, including heterobipolar transistors, heterotransistors with quantum dots, devices and structures with resonant tunneling for development and introduction of technologies of their manufacturing. The purpose of work is creation of a supply with information for modelling perspective semiconductor nanometer devices for ultra fast integrated curcits and a supply with information of technologies of their manufacturing. In the first section is the review of the scientific literature and the basic directions of development submicron and nanometer electronics are formulated. The second section contains results of calculations, which are necessary for modelling parameters for the most perspective semiconductors A3B5 (GaAs, InP, GaN) in a high electric field, including high-frequency and dynamic conductivity and its boundary frequency. In the third section the developed mathematical models are described and heterostructure characteristics from the point of view of performance and their use in submicron and nanometer components, including , in particular, quantum dots are analyzed. Perspective structures heterotransistors are offered. In the fourth section the mathematical model of the resonant tunnel diode (RTD) is described created during performance of work, and results of modelling for test structure RTD are resulted. Influence of design data of two-barrier quantum system on electric characteristics of the resonant tunnel diode that can be used for optimization of topology RTD and reception of diodes with in advance set properties is proved and calculated. In the fifth section high-speed properties submicron heterotransistor structures are analysed and properties of 2-dimentional electronic gas of structure with two quantum holes are revealed, 2-dimentional and analytical models are resulted and calculations submicron heterobipolar transistors in view of effect of a self-warming up are lead. Product Description popup.authors popup.nrat_date 2020-04-02 Close