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Information × Registration Number 0208U006413, 0106U002370 , R & D reports Title The influence of polytypism on electronic properties of silicon carbide in high electronic fields. popup.stage_title Head Germach Ludmila Pavlovna, Registration Date 10-11-2008 Organization Faculty of аircraft and space systems NTUU "KPI" popup.description2 The results of experimental investigations of the influence of polytypism on the electrical breakdown and breakdown electroluminescence characteristics in the p-n-structures on the base on mono crystalline silicon carbide have been performed. The significant influence of the crystalline modification of SiC on the electronic processes in the breakdown electrical fields have been founded out and analyzed. Product Description popup.authors popup.nrat_date 2020-04-02 Close