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Information × Registration Number 0208U010193, 0107U007214 , R & D reports Title Investigation and elaboration of technology for high-efficient diodes millimeter and sub-millimeter range based on wide bandgap n+n-n+ аnd n+-i-n+ epitaxial heterostructures. popup.stage_title Head Belyaev Alexander, Доктор фізико-математичних наук Registration Date 12-01-2009 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 Results of calculations of electron distribution function and transport characteristics of hot electrons in compensated group III-nitrides are presented. Electron transport over wide range of electric fields and temperatures has been investigated. As a result technical solutions and technology for manufacturing of diodes based on group III-nitrides epitaxial structures have been proposed. Complex study of Gunn diodes characteristics in temperature range from 77 to 700?К has been carried out, notably: і) study of current-voltage characteristics of short and ultra-short n+-n-n+ and n+-і-n+ diode heterostructures in steady regime; іі) simulation of transform microwave characteristics of the n+-n-n+ type diode's housing. Technology process for packaging of mesa-structures has been elaborated and pilot samples of the diodes have been manufactured. It is shown that: i) negative conductivity arises due to deceleration of electrons in the diode's base at local electric field increasing. The conclusion allowsoptimization of regimes for amplification and generation of sub- and terahertz radiation. ii) The diode's housing effectively transforms the low ohmic resistance of the structure. The transformation manifests resonance behavior. Output resistance of the diode is approximately 120 Ohm at resonance frequency that allows impedance matching. According to simulation results geometric parameters of housing for microwave diodes of n+-n-n+ type have been chosen that provides efficient transformation of the mesa-structure impedance at given frequency. Product Description popup.authors popup.nrat_date 2020-04-02 Close