Search academic texts

Information × Registration Number 0209U002434, 0106U000893 , R & D reports Title Physical and technological aspects of creation of photodetector with the photosensitiveness guided in the heterosystem of "semiconductor- porous surface" popup.stage_title Head Sukach George Aleekseevich, Registration Date 12-02-2009 Organization Kiev national university of technology and design popup.description2 Spectral, morphological, structural and integral characteristics of elements of optoelectronics are studied on the basis of porous Si and GaAs. A method of receipt of thin films of cube GaN on lining from the porous layer of GaAs is offered and patented. Research of influencing of annealing in the atmosphere of nitrogen radicals on luminescent properties of GaN:Zn films, growth by the MOCVD of epitaxy method, is conducted. With the use of Monte Carlo method the numeral modeling of thin-filmed multi-layered optical filters is conducted. Product Description popup.authors popup.nrat_date 2020-04-02 Close