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Information × Registration Number 0209U002482, 0107U008435 , R & D reports Title Development of sensors on the basis of radiation-resistant heterojunctions from layered structures for nuclear radiations detectors. popup.stage_title Head Kovalyuk Zakhar, Registration Date 13-02-2009 Organization Chernivtsi Department of the I.M.Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine popup.description2 The technology of obtaining layered III-VI crystals as detector materials is improved and intrinsic oxide-р-InSe, n-p-InSe, p-GaSe-n-InSe structures are prepared on their basis. The complex investigation of the influence of -, electron and neutron irradiations are carried out on these crystals and structures, dose dependences of current for sensors based on the layered semiconductors are studied. Product Description popup.authors popup.nrat_date 2020-04-02 Close
R & D report
Development of sensors on the basis of radiation-resistant heterojunctions from layered structures for nuclear radiations detectors.
Head: Kovalyuk Zakhar. Development of sensors on the basis of radiation-resistant heterojunctions from layered structures for nuclear radiations detectors.. (popup.stage: ). Chernivtsi Department of the I.M.Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine. № 0209U002482
1 documents found

Updated: 2026-03-26


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