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Information × Registration Number 0209U002698, 0106U001682 , R & D reports Title Investigation of the physical mtchanisms of current in the semiconductors injection structures at the action of external revolting factors (ligght, magnetic field, pressure) popup.stage_title Head Kurmashev Sh. D., Registration Date 12-03-2009 Organization I. I. Mechnikov Odessa National University popup.description2 3. Objects of the researches are injection structures on the base of homogeneous materials and semiconductors with macro- and microgradients (Ge, Si with deep impurities levels, heterojunctions, graded-band gap semiconductors). The purpose of the work- creation of conception of physical mechanisms of current in semiconductor injection structures at the action of external revolting factors (light, magnetic field, pressure). Modulation of parameters of distributing of non-equilibrium transmitters of charge is grounded at an injection in semiconductors with deep impurities levels The laboratory models of highly sensitive sensors of light, sensors of IR-light, magnetic field pressure are developed. Product Description popup.authors popup.nrat_date 2020-04-02 Close