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Information × Registration Number 0209U005168, 0106U001313 , R & D reports Title Development and investigation of wide-band IR detectores based on CdHgTe epitaxial structures popup.stage_title Head Pysarevsky Volodymyr Konstyantynovych, Registration Date 21-01-2009 Organization Ivan Franko Lviv National University popup.description2 It has been carried out the results of investigations of homo- and graded-gap layers of CdHgTe (CMT), phoelectric and diffusion processes in them. With the aim of practical realization of the developed theoretical models it has been carried optimization of the technological methods of obtaining epitaxial layers of CMT, their doping and annealing. Modelling the sensitivity of phptodtectors based of graded-gap CMT structures with coordinate dependence of energy gap has been performed, ion-plazma etching of CMT epitaxial layers with ions of argon and mercury has been caried out ,processes of conversion of conductivity of CMT have been studied and the results of measurements of field dependencies of Hall coefficient and temperature dependence of carrier mobility nave been analyzed by the method of discrete spectra. Using the spectroscopic possibilities of STM it has been studied the local density of the surface states and their energy spectrum. On the basis of the developed techologies it has beenrealized laboratory samples of photovoltage and photoresistor structors of IR range. Optimization of their parameters for work in spectral apparatus has been made. Product Description popup.authors popup.nrat_date 2020-04-02 Close