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Information × Registration Number 0209U006320, 0106U001537 , R & D reports Title Physical Phenomena in Transfer Electrons Variband Devises on base of A3B5 semiconductors nitrides popup.stage_title Head Arkusha U., Registration Date 04-02-2009 Organization Kharkov National University named after V.N.Karazin popup.description2 A research object is a transport of electrons in devices with the intervalley transfer of electrons on the basis of semiconductor nitride of A3B5. A purpose of this work is research of physical processes which are CPLD from IET in the devices of mm-range on the basis of semiconductors of GaN, InN, AlN, InGaN, AlGaN, AlInN, including varyzone. A research method is numerical experiments by the two temperature model of varyzone semiconductor devices with IET. Basic results and their novelty: 8.Dependences of drift velocity and times of relaxation of electrons are expected on tension electric field in GaN, InN, AlN, InхGa1-хN, AlхGa1-хN, AlхIn1-хN, which testify to their perspective in devices with IET of submm- range. The maximum relation of maximal drift velocity of electrons to minimum velocity of electrons belong to InN. 9.The devices with IET on the basis of semiconductor nitride, especially in AlN, arise up complication on the warming-up of electronic gas near to the cathode and his thermolizationin an anodal contact. Measures which was used in devices on the basis of other semiconductors is ineffective. 10.The devices on the basis of semiconductor nitride, especially AlN, needed greater in twice than in GaAs a value of the parameter n0l for formation of volume charge waves. 11.In InN devices of n+-n--n-n+ structure the effect of dependence of drift domain area length takes a place from the applyed field strength, that results in a device has a considerable frequency interval of alteration. For example, a device with length of active area of 2.5 µm can effectively work on a basic harmonic from 35 to 190 GHz with maximal efficiency 8.7% on frequency 60 GHz. 12.Maximum frequency of generation 600-1000 GHz belongs among binary and triple semiconductor nitride n+-n--n-n+: InN to the devices at critical length of active area of less than 0.4 µm. 13.The varyzone devices on the basis of AlN-GaN and AlN-InN have a typical increase of efficiency at shortening length of varyzone layer. Optimum length of varyzone layer in InN-GaN, AlN-GaN and AlN-InN devices with length of active area of 2.5 µm is 0.7 µm. Maximal values of efficiency are in varyzone InN-GaN, AlN-GaN and AlN-InN devices approximately identical from 2% to 4%, that approximately in 1.5 times higher than in of the same type devices on the basis of GaN, AlN, InхGa1-хN, AlхGa1-хN, AlхIn1-хN. 14.The n+-n--n-n+- devices on the basis of InN-AlN there are the special office hours at length of varyzone layer of less than 2 µm, when simultaneously two drifts different instability of current, namely - a high-field domain from the cathode to the anode and a layer is enriched from the center of varyzone layer to the anode. Degree of introduction. The materials of fundamental researches of this NDR is published in 9 articles in scientific magazines, and 5 mesages was made on international conferences. Research materials were utillized in an educational process on the department of physycal and biomedical electronics and complex information technologies of the Kharkov national university of V.N.Karazin. Recommendations to using of the results of work. Properties of semiconductor nitride in the strong electric fields have considerable features which distinguish them from other semiconductors of A3B5. Accordingly results of NDR can be the theories of transport phenomena utillized for development in difficult semiconductor structures, and also for technological developments of new devices of submm- range. NITRIDE SEMICONDUCTORS, INTERVALLEY ELECTRON TRANSFER, VARYZONE SEMICONDUCTOR, GUNN-DIODE, GENERATION, DRIFT VELOCITY OF ELECTRONS, TWO TEMPERATURE MODEL Product Description popup.authors popup.nrat_date 2020-04-02 Close