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Information × Registration Number 0209U008127, 0107U005451 , R & D reports Title The nanosize structure diagnostics and working out technological grounds of new generation processing devices manufacture. popup.stage_title Head Nakhodkin Mykola, Registration Date 28-01-2009 Organization Taras Shevchenko Kiev university popup.description2 The basis of technology had been created, to fabricate ultra-shallow p-n junctions applied in photosensors of increased sensitivity and wide spectral range. The ultrasonically processed NC/SiO2 structures were synthesized. A method for up to 20 times increase of their photolumines- cence efficiency is proposed. Device prototypes for information storage and recording, radiation sensors and an electroluminescent device were fabricated. The ways to overcome theoretical limits for field effect transistors' parameters are proposed. Product Description popup.authors popup.nrat_date 2020-04-02 Close