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Information × Registration Number 0209U008183, 0107U005659 , R & D reports Title Research of possibility of creation of microwave high power sources on the basis of avalanche ionization high-field mechanisms and carrier intervalley transfer in GaN popup.stage_title Head Goncharuk Nina Michailivna, Registration Date 29-01-2009 Organization State Scientific-Reseach Institute "Orion" popup.description2 During the research the mathematical models were created and calculations are conducted with the purpose of investigation of a resonant-tunneling and unresonance emission of Si nanostructural cathodes for vacuum resonanct-tunneling diodes (RTD). Mathematical models are created, calculations and theoretical researches of impedans and frequency characteristics of vacuum RTD are conducted on the basis of Si and GaN nanostructural cathodes, semiconductor RTD on the basis of GaN semiconductor double barrier quantum structure (DBQS), and also GaN vacuum and semiconductor diodes on the basis of unresonance mechanisms of charge carrier transfer. It is developed and investigated the mathematical models which allow to probe static characteristics of GaN connections taking into account many valleys of their conduction area. . Experimental models of matrix Si nanostructural cathodes with field-emission tips are manufactured, experimental research of emission characteristics is performed, namely works of output ofelectron, threshold electric-field, emission stability and emission current density. Product Description popup.authors popup.nrat_date 2020-04-02 Close