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Information × Registration Number 0209U010444, 0107U002212 , R & D reports Title The formation of stable nanodimensional film composition in UHF diodes in range of 33-140 GHz, wich are preparing for silicon technology popup.stage_title Head Makogon Iurii Mykolayovich, Registration Date 03-12-2009 Organization Faculty of аircraft and space systems NTUU "KPI" popup.description2 The stable nanosized multilayer film composition on the mono crystalline silicon for super high frequency diodes of millimetre range that produced by silicon technology by use of addition layers as diffusion barrier for lowing interdiffusion rates of metal atoms between layers and also diffusion of silicon atoms into film under electric current influence and exploration temperature rise are investigated and formed. It was established that with replacement of aluminium current-conducting layer by copper in Ti(200 nm)/Cu(200 nm)/Ti(10, 100 nm)/SiO2(370 nm)/Si(001) film composition, the use of Ti(10, 100 nm)/SiO2(370 nm) diffusion -controlled membrane is caused the barrier effect and at the expense of the interlayers interaction processes minimize is raised thermal stability of copper layer up to 970 К, that on 120 К higher in comparison with early investigated systems. It is proposed and experimentally confirmed the theoretical multistage model of structure and phase transitions in the reaction diffusion processes in "Ni (Ti)film layers nanometres thicknesses (5 - 30 nm) - Si(001) monocrystall" at thermal treatment in (770-1270) К temperature range. It is shown the possibility of the practical use the decision received by numerical methods for simulation and forecasting of diffusion growth of the new phases particles Product Description popup.authors Вербицька Т.І. Котенко І.Є. Макогон Ю.М. Павлова О.П. Тихонович В. Б. popup.nrat_date 2020-04-02 Close