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Information × Registration Number 0210U000860, 0108U002363 , R & D reports Title Development theoretical and experiment investigation of new high-efficient luminescent Si- and Ge-based nanostructures popup.stage_title Head Korbutyak Dmytro, Доктор фізико-математичних наук Registration Date 06-04-2010 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Relatioship between technological conditions of formation of oxide photoluminescent films with Si (Ge) quantum dots at their pulse laser deposition and structural properties of such film has been established. Analysis of the influence of film structure on the film luminescent properties at room temperatures in the visible range of spectrum has been fulfilled. Product Description popup.authors Єрмаков В.М. Іваськевич Л.М. Бєгун Є.В. Демчина Л.А. Каганович Е.Б. Калитчук С.М. Корбутяк Д.В. Крюченко Ю.В. Купчак І.М. Манойлов Е.Г. Саченко А.В. popup.nrat_date 2020-04-02 Close
R & D report
Development theoretical and experiment investigation of new high-efficient luminescent Si- and Ge-based nanostructures
Head: Korbutyak Dmytro. Development theoretical and experiment investigation of new high-efficient luminescent Si- and Ge-based nanostructures. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0210U000860
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Updated: 2026-03-23


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