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Information × Registration Number 0210U000881, 0107U008181 , R & D reports Title Development of techniques and equipment for diagnostics of reliability of silicon superhigh-power pulse IMPATT diodes popup.stage_title Head Konakova Raisa Vasil'evna, Registration Date 07-04-2010 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 We developed a quick nondestructive procedure and made equipment for diagnostics and estimation of reliability of super-high-power silicon IMPATT diodes. The procedure is based on analysis of the features of pulse I V curves. We determined the main parameters of pulse I V curve that may be used for diagnostics of super-high-power silicon IMPATT diodes. A correlation between the number of out-of-service diodes and voltage jump in the region of negative differential resistance (NDR) was established. We demonstrated a possibility to perform sorting of IMPATT diodes by the value of voltage jump in the NDR region of pulse I V curve. Product Description popup.authors Карп Р.І. Конакова Р.В Кудрик Я.Я Шеремет В.М. Шинкаренко В.В. popup.nrat_date 2020-04-02 Close