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Information × Registration Number 0210U003670, 0107U000857 , R & D reports Title Investigation of the peculiarities of growing high-melting oxide crystals for laser, scintillation and optoelectronic devices by the HOC method in reducing media; study of the mechanisms of the formation of their functional properties popup.stage_title Head Dan'ko Aleksandr Yakovlevich, Registration Date 23-02-2010 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 The method of HOC was used to grow Ti:sapphire crystals as well as YAG, LuAG doped with Ce3+ and Pr3+. It is shown that the obtained crystals can be used for the making of laser and scintillation elements with high functional characteristics. Studied are the conditions of the obtaining of AIN and AlON crystalline films and the mechanism of their formation. The dependences of the structural characteristics of AIN film on the crystallographic orientation of sapphire and the phisico-chemical conditions of the synthesis, are established. Product Description popup.authors Будніков Олексаедр Тимофійович Ром Михайло Аронович popup.nrat_date 2020-04-02 Close
R & D report
Investigation of the peculiarities of growing high-melting oxide crystals for laser, scintillation and optoelectronic devices by the HOC method in reducing media; study of the mechanisms of the formation of their functional properties
Head: Dan'ko Aleksandr Yakovlevich. Investigation of the peculiarities of growing high-melting oxide crystals for laser, scintillation and optoelectronic devices by the HOC method in reducing media; study of the mechanisms of the formation of their functional properties. (popup.stage: ). Institute for Single Crystals National Academy of Sciences of Ukraine. № 0210U003670
1 documents found

Updated: 2026-03-24


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