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Information × Registration Number 0210U005493, 0109U005649 , R & D reports Title Structural and phase transformation in II-VI crystals and its solid solutions stimulated by nanosecond pulses action of laser radiation; formation of nanosize and barrier structures popup.stage_title Head Vlasenko Alexandr Ivanovich, Registration Date 15-12-2010 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Dominating mechanisms of structural and phase transformations have been investigated at formation of subsurface nanosize structures and barrier (p-n) structures in compound semiconductors of II-VI and some of its solid solutions under the influence of nanosecond laser pulses. It was investigated the physicsl properties of single crystals of CdTe and its solid solutions MnxCd1-xTe, ZnxCd1-xTe and ZnxCd1-xSe. Also laser techniques of formation of nanostructured surfaces and nanolayers with the characteristics different from properties of the basic volume of crystals were developed. The contribution of various effects which arise at a pulse laser irradiation of compound semiconductors in particular thermal, photon, acoustic and shock waves, etc., on processes of formation and transformation of defects in CdTe, MnCdTe, ZnCdTe and ZnCdSe was established. From experimental data are established the regime of processing of CdTe crystals by the ruby laser pulses for the directed laser-induced transformation of system of defects in crystal subsurface areas. From the analysis of frequency change and semi width of LO-phonon lines (CdTe) within the limits of model "spatial correlation of phonons" are estimated the sizes of clusters under different conditions of a laser irradiation. Correlation between the estimated sizes nanoclusters from Raman spectra and received of АСМ images was established. From ellipsometric measurements of CdTe (111) semi insulating crystals, it is established that the best barrier structures are formed when the doping of CdTe crystals by deposited film of indium on the A (Cd ) sides. On the basis of VC and PC researches results of CdTe and CdZnTe crystals and barrier structures on their basis, received at a laser irradiation with deposited film of In it was shown the possibilities solid phase doping of subsurface area of crystals. Parameters of a laser irradiation and a condition of processing for reception diod structures with high straightening are defined. The method laser-induced doping and formation of p - n junctions in CdTe crystals was optimized, the mechanism of doping was analyzed, the data file concerning electric properties diode structures In/CdTe/Au is received and conditions for maintenance of low density of a current of J are defined. It is defined that samples in which J <10 нА/см2 (V =-100) is suitable for detecting x-ray and radiations. The spectrum of isotope Co - 57 with resolving power ability of 2,8 % (peak 122 кеВ) is received at a room temperature that testifies to efficiency of the developed methods of formation of barrier structures and perspectivity of use of the made diodes as detectors of high-energy radiation. Product Description popup.authors Байдулаєва А. Бойко М.І. Велещук В.П. Власенко З. К. Власенко О. І. Гнатюк В.А. Левицький С. М. popup.nrat_date 2020-04-02 Close