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Information × Registration Number 0210U005709, 0109U007042 , R & D reports Title Study of light-emitting and charge transfer mechanisms in nanostructurated a-SiO2:C layers on silicon for perspective white light-emitting sources popup.stage_title Head Nazarov Oleksiy Mykolayovych, Registration Date 04-01-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Last years it was found that silicon oxide incorporated by carbon nano-clusters (SiO2:C) is a promising material as natural white-light source. In the Lahskaryov Institute of Semiconductor Physics it has been proposed and developed a new original method of the synthesis of SiO2:C layers by successive carbonization and oxidation of porous silicon. It was shown that color of this irradiation can be varied by adjusting corresponding parameters of the synthesis (porosity of porous Si precursor, temperature and time of carbonization and oxidation procedure etc.). But physical mechanisms of charge transfer and trapping, and light-emitting in the SiO2:C layers are still unknown. Moreover origin of light-emission in similar nanostructured materials is still under discussion. The present project proposed to perform the systematic study of the light-emitting properties and light-emitting mechanism in carbon incorporated silicon oxide layers fabricated using porous silicon precursor with well determined structural and morphological parameters. Weakly doped p- and n-type Si wafers will be used for fabrication of porous silicon substrate. Free standing porous silicon layers are also expected to be fabricated. Systematic investigation of nanostructure, bonding structure, paramagnetic defects, charge transfer and trapping, and its correlations with photoluminescence will be performed using scanning electron and atom force microscopies, thermally activated current and admittance spectroscopy, infra-red spectroscopy, Raman scattering, photoluminescence (PL), electron paramagnetic resonance (EPR) spectroscopy etc. The thermally activated spectroscopy, the PL and EPR will be studied in temperature range of 4.2 - 300 K. Product Description popup.authors Васін А.В. Назаров О.М. Охолін П.М. Русавський А.В. popup.nrat_date 2020-04-02 Close