Search academic texts

Information × Registration Number 0210U005734, 0109U006172 , R & D reports Title Investigation of modifications of defect structure induced by magnetic field in III-V compounds popup.stage_title Head Milenin Victor, Registration Date 05-01-2011 Organization V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 Magnetic-induced effect of nonmonotonic oscillatory changes of intensity of the radiative recombination, optical reflexion and a roughness of surface of GaAs, GaP, InP and homoepitaxial layers on their basis due to short-term (20 ms) and long-term (up to 15 min) influences of weak magnetic fields (B=8-60 mT, f=10 Hz) was found out. It is shown that weak-field treatment resulted to reorganisation of a impurity-defective composition of a semiconductor material. The most important in these transmutations is the destruct of vacancies-containing complexes in III-V compounds, with next formation of defects of new type, including recombination that resulted in changes of optical and morphological characteristics of semiconductors. Transformations of the defective structure of the binary semiconductor materials, induced by weak magnetic-field treatment should be considered at creating the semiconductor parts of devices which work in the conditions of passive activity of a background magnetic field of low power, for the purpose of prevention of premature uncontrollable process of degradation of their parametres. It is shown, that the most sensitive to magnetic field action are the complexes created by vacancies, antistructural defects, and also the impurity atoms of silicon and copper, but electrical and deformation fields in near-surface layers of semiconductors influence on character of structural reorganisations only after magnetic field treatment Product Description popup.authors Мілєнін Віктор Володимирович Редько Роман Анатолійович popup.nrat_date 2020-04-02 Close