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Information × Registration Number 0211U000105, 0109U004510 , R & D reports Title The role of self interstitials in defect formation processes in Ge and germanium-silicon solutions. popup.stage_title Head Khirunenko L.I., Registration Date 14-01-2011 Organization Institute of physics NASU popup.description2 The subject of the study is monocrystalline germanium, isotopically enriched with 74Ge and 76Ge germanium, germanium doped with tin. The object of work is the investigation of the role of self-interstitial atoms in the processes of radiation defects formation in germanium. As a result of the studies of the temperature transformation of radiation defects in irradiated Ge it was experimentally found that the self-interstitials in germanium are annealed in the temperature range 180-210 K by diffusion. The studies of Ge doped with tin, germanium with different oxygen content, as well as samples of isotopically enriched 74Ge and 76Ge have been shown that self-interstitials at diffusion interact efficiently with oxygen with formation of interstitials + oxygen (ІO) centers. It was shown that the complexes ІO exist in three configurations. ІO, in one of the configurations, anneals in the temperature range 220-240 K, being transformed into a more stable І2O configuration. ІO in two other configurations anneal simultaneously in the temperature range 280-325 K. During annealing one of the configurations transformed into centers І2O, and the second transforms into ІO2 through the precursors. It was established that the complexes I2O are stable up to temperatures near 400 K and transform at anneal into IO2 complexes. The cluster calculations performed by the local density functional. On the base of obtained at calculations data the models of detected defects were proposed and the frequencies of their local vibrations were estimated. The results of calculations are in good agreement with observed experimental vibrational frequencies. Product Description popup.authors Дуванський Андрій Володимирович Помозов Юрій Васильович Соснін Михайло Георгійович Хируненко Людмила Іванівна Яшник Віктор Іванович popup.nrat_date 2020-04-02 Close