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Information × Registration Number 0211U000304, 0108U000112 , R & D reports Title Polaritions in optico-anisotropies semiconductors, dielectrics and structures based oh them popup.stage_title Head Melnichuk O.V., Registration Date 28-01-2011 Organization Nizhin state Gogol University popup.description2 Surface phonon and Plasmon-phonon polaritons of all types are recorded by PPVV method in uniaxial optically anisotropic crystals ZnO, 6H-SiC, BeO, CdS and structures on their basis, taking into account the influence of surface roughness and strong homogeneous magnetic field. It is shown that in single crystals ZnO and 6H-SiC up to 4 branches of the dispersion can exist. The nondestructive method for determining the optical and electrophysical parameters of polar semiconductors, located in a strong homogeneous magnetic field is proposed on the example of optically anisotropic semiconductors ZnO and 6H-SiC. The mathematical model is developed that allows the polar uniaxial crystals and structures based on them to conduct investigations of the attenuation PP coefficients in the presence of a strong homogeneous magnetic field (with Faraday and Voigt configurations) taking into account the Plasmon-phonon interaction. Product Description popup.authors Євтушенко А.І. Бойко М.П. Грибань В.М. Корбутяк Д.В. Мельничук Л.Ю. popup.nrat_date 2020-04-02 Close