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Information × Registration Number 0211U001519, 0109U002419 , R & D reports Title Ability analysis of deposition nanoscale X-ray multilayers with controlled construction. popup.stage_title Head Kondratenko Valerij, Registration Date 09-02-2011 Organization The Kharkov state polytechnical university popup.description2 Object: W/Si, Co/C and Sc/Si multilayers with layer thickness 0.7-25 nm. The purpose: development of physical and manufacturing concept for deposition multilayer with controlled longitudinal distribution of period and controlled interfacial construction. Methods: X-ray diffractometry, X-ray small angle diffraction, simulating of X-ray small angle diffraction, high resolution transmission electron microscopy, atomic-force microscopy, X-ray methods with synchrotron radiation sources.Results: changes in X-ray multilayer construction is capability for significant increase of operating characteristics of X-ray spectrometry apparatus and is new facility for development X-ray microscopy, X-ray multilayers with higher temperature stability. 1) X-ray multilayer with varying longitudinal period distribution (as compared to crystal with tradition uniform longitudinal period distribution) in X-ray fluorescent quantometer for determining of low-Z chemical element content increases up to 1.5-2 times operating quantometer characteristics (background decreasing, useful signal intensity elevation, useful signal contrast elevation, elevation sensitivity of apparatus). 2) It is possible to construct multilayers (with close tolerance requirements) for Schwarzschild objective operating on wavelength 4.4-4.54 nm. Со/С multilayer deposition technique for spherical concave and convex substrates with annealing period correction was developed. For the first time multilayer mirrors were produced. Throughput of designed Schwarzschild objective was 0.25%. 3) Interlayer interaction of Sc and Si layers was disabled completely by Cr barrier layer with thickness 1.0 nm on Sc/Si multilayer interfaces. Interlayer interaction of Sc and Si layers was prevented by barrier layer with thickness 0,3 nm. Cr and CrB2 barrier layers after interaction with Si were transform into thin amorphous interlayer. Degradation temperature Sc/Si multilayer with Cr and CrB2 barrier layers was 30-80°. The field of application: scientific instrument engineering, X-ray microscopy, astrophysics. Product Description popup.authors Бугаєв Єгор Анатолійович Девізенко Олександр Юрійович Зубарєв Євгеній Миколайович Копилець Ігор Анатолійович Мишньова Надія Кузьмівна Першин Юрій Павлович Севрюкова Вікторія Анатоліївна popup.nrat_date 2020-04-02 Close