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Information × Registration Number 0211U002216, 0109U002607 , R & D reports Title Development of technologies of obtaining and modification of properties grated-band-gap epitaxial layers CdHgTe for detectors of IR radiation popup.stage_title Head Pysarevsky Volodymyr Kostiantynovych, Registration Date 26-01-2011 Organization Ivan Franko National University of Lviv popup.description2 Technological techniques are developed and parameters are optimized for the processes of obtaining graded-band-gap Cdx Hg1-xTe material suitable for realization of the theoretically forecasted physical effects of increasing the efficiency of IR detectors. Using etching in RF plasma it has been modified the properties of Cdx Hg1-xTe for controlled obtaining material of n- and p- types of conductivity, obtaining photovoltaic and photoconductive detectors in single technological cycle. Influence of band-gap gradient on the processes of diffusion of doping impurities and interdiffusion of solid solution component is studied. Theoretical model of the photoelectric processes in graded-band gap layers are developed and on their basis layout of photosensitive elements is optimized. It is carried out theoretical modeling of influence of band-gap gradient on formation of energy band diagram of graded-band gap layers and their current-voltage characteristics, as well as peculiarities of photovoltaic detectors with intrinsic and impurity type of conductivity. Energy band-gap diagram of graded-band gap layers with gradient of dielectric permittivity and effective masses of charge carriers is calculated and processes of interfacial recombination and extraction of photocarriers. On the basis of these results it is developed the technology of creation of photosensitive elements of photodiode and photoconductive types, deposition of passivation covers, contact groups, devices of interfaces of PSE with read-out schemes, optimized modern techiques of determining structural perfomance of epitaxial layers and their surface and investigated parameters of the obtained laboratory multi-element photosensitive structures. Product Description popup.authors Галій Павло Васильович Кавич Володимир Йосипович Коман Богдан Петрович Сімків Богдан Олексійович Савчин Володимир Павлович Соколовський Богдан Степанович Стахіра Роман Йосипович popup.nrat_date 2020-04-02 Close
R & D report
Head: Pysarevsky Volodymyr Kostiantynovych. Development of technologies of obtaining and modification of properties grated-band-gap epitaxial layers CdHgTe for detectors of IR radiation. (popup.stage: ). Ivan Franko National University of Lviv. № 0211U002216
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Updated: 2026-03-24