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Information × Registration Number 0211U005032, 0110U007828 , R & D reports Title Research of properties of silicon, got in the atmosphere of nitrogen popup.stage_title Head Kritskaja T.V., Доктор технічних наук Registration Date 08-02-2011 Organization Zaporozhye State Engineering Academy popup.description2 The basic limits of fiuoridnoj technology are probed: piay of quartz sand and kaolin is from a Growing of single-crystals of silicon in the atmosphere of nitrogen, along with reduction of prices of process, allows to reduce in single-crystals the concentrations of carbon, termodonorov, promote the size of time of life of non-equilibrium charge carriers and provide large homogeneity of distribution of oxygen. Product Description popup.authors Критська Т.В. popup.nrat_date 2020-04-02 Close