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Information × Registration Number 0211U006043, 0109U005354 , R & D reports Title Real-space transfer and far-infrared emission of hot electrons in the heterostructures with tunnel-coupled quantum wells. popup.stage_title Head Poroshin V.M., Registration Date 16-02-2011 Organization Institute of physics NASU popup.description2 The results of investigations of electron lateral transport, and accompanying radiation under electric field in semiconductor heterostructures with quantum wells caused by real space transfer of carriers under the conditions of heating them by electric field. The heterostructures n-InxGa1-xAs/GaAs with double tunnel-coupled QWs and doped in one of them; with a single QW and doped in barriers, with a triple QWs were studied. Numerical calculations and simulations of hot electrons transport in heterostructures have been carried out, and also current-voltage characteristics and FIR radiation at the low temperatures have been investigated. It is shown that space charge, which appears in selectively doped structures with quantum wells due to carrier redistribution by energy and in real space influences on the nature of hot electrons radiation in these structures. It is proposed to use heterostructures with symmetric triple quantum wells. In the case of real space transfer of carriers there was found an increase of carrier radiation intensity, which indicates on transfer of electrons onto higher energy size quantization subband in double coupled wells. There is shown a strong influence of indium segregation in process of structures growth on the potential profile of structures, energy spectrum, and mobility of carriers, which reflects back on heating, and real space transfer. Product Description popup.authors Більовський Павло Антонович Вайнберг Віктор Володимирович Васецький Віктор Михайлович Винославський Михайло Миколайович Гуденко Юлія Миколаївна Кравченко Андрій Володимирович Пилипчук Олександр Сергійович Порошин Володимир Миколайович popup.nrat_date 2020-04-02 Close