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Information × Registration Number 0211U006428, 0110U006409 , R & D reports Title Detail design "Mathematical simulation of prodaction of mono- and multi-silicon ingots having reduced content of technological impurities and improved structural perfection" popup.stage_title Head Kovtun Genadiy Prokopovich, Registration Date 24-03-2011 Organization National Science Center "Kharkiv Institute of Physics and Technology popup.description2 The objective is development of mathematical models and program code for modeling migration and ultimate concentration of admixture elements during directional crystallization of silicon suitable for solar cell production. Mathematical and computer simulation was used as the method of investigation. Review and justification of physical models that describe the mechanisms and processes of directional solidification without a reference to their concrete realization were carried out. The models were worked out and algorithms to calculate space distribution of concrete technological admixtures with taking into account their redistribution between crystal and malt, evaporation and arrival under optimal conditions of structural perfect single and multi-silicon crystals production were developed. Product Description popup.authors Даценко Ольга Анатольївна Кондрик Олександр Іванович popup.nrat_date 2020-04-02 Close