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Information × Registration Number 0211U007400, 0106U008917 , R & D reports Title The study of kinetic and electrooptik phenomena’s in bulk semiconductors and nanostructures for determination of conditions for intracenter inversion in the THz range. popup.stage_title Head Tulupenko Victor N., Registration Date 20-04-2011 Organization Donbass State Engineering Academy popup.description2 Research object -- kinetic and electrostatic phenomena in bulk semiconductors and nanostructures based on samples of germanium and monokrystalychnyh silicon hole type conductivity, and properties of films and boronitrydiv borides of vanadium and tantalum synthesized by reactive and Reactive RF magnetron sputtering and VB2 TaV2 . Method of research - experimental and theoretical. Theoretical and practical results. These methods of measuring film thickness (x-ray and interference). Substances with improved performance. Found new places doping. Novelty - The optimal interval deposition of vanadium and tantalum diboride, which provides for a maximum thickness of films with the composition close to stoichiometric. The first study and explained the mechanism nitrydyzatsiyi VB2 targets in the environment "argon + nitrogen, which leads to lack of boride phases in the films obtained and show the differences for reactive sputtering and TaV2 VB2. Application - Research and development on natural sciences and engineering. Product Description popup.authors Білих Валерій Георгійович Богданова Татьяна Леонідівна Демедюк Роман Олександрович Костенко Володимир Михайлович Масич Віталій Васильович Огньотова Жанна Миколаївна Петухов Вадим Вікторович Соломіна Вікторія Федорівна Тишкевич Анатолій Володимирович Тулупенко Віктор Миколайович Тютюнник Антон Михайлович Фоміна Оксана Сергіївна popup.nrat_date 2020-04-02 Close