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Information × Registration Number 0211U008514, 0110U005676 , R & D reports Title Testing of the technological parameters and the establishment of a pilot sample of equipment for semi-continuous cultivation profiled multicrystalline silicon ingots popup.stage_title Head Shapovalov Viktor Aleksandrovich, Доктор технічних наук Registration Date 15-06-2011 Organization E.O.Paton Electric Welding Institute of the National of Sciences of Ukraine popup.description2 The patent information retrieval on methods, equipment and technological processes of the continuous and semi-continuous cultivation of multicrystalline ingots of silicon for production of elements of photo-electric transformers is held. It is set that low efficiency of photo-electric transformers from the multicrystalline silicon, which got on these methods, as compared to photo-electric transformers from the silicon, which got on technology of the directed crystallization, is related to the insufficient working off the technological process of receipt of the profiled multicrystalline ingots. The ways of improvement of technological process are marked. The flow-sheet of pilot sample of equipment for the semi-continuous growing of multicrystalline ingots of silicon is worked, basic technical parameters are certain and requirement specification on his creation is developed. The preliminary working of basic technological knots of equipment of pilot standard is executed. Product Description popup.authors Якуша Володимир Вікторович popup.nrat_date 2020-04-02 Close