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Information × Registration Number 0211U009423, 0110U002462 , R & D reports Title Development of technology for oriented films of aluminum nitride piezoelectric properties for the functional organization of MEMS-structures composed of nanoelectronic cells. popup.stage_title Head Yakimenko I. Yuri, Registration Date 16-12-2011 Organization Research Institute of Applied Electronics of Natoinal Technical University of Ukraine "KPI" popup.description2 A process flow getting low synthesis of aluminum nitride films aimed to create functional electronic cells. Past studies of the structure and physico-chemical characteristics of thin films of aluminum nitride (AlN) to create a functional MEMS structures. For the first time fulfilled technological regimes of synthesis of aluminum nitride oriented films by reactive magnetron sputtering on to uous stream using a mixture of ammonia and nitrogen and argon, which allowed to increase the synthesis of nitride compounds. The research on the impact of vacuum modes spivrozpylennya the chemical composition, structural, electrical and optical properties of oriented films of aluminum nitride on silicon substrates. The analysis of the main technological methods to improve the electronic and physical properties of films for crystalline perfection of layers of A1N, surface quality and good transport properties. Found that for the synthesis of aluminum nitride films is needed to install a vacuum pump pressure of residual gases 7o10-5 Pa, giving RF bias to the substrate (50B, 10 MHz) and the discharge capacity of 300 and 500W respectively at 100 and substrate 25°C. These thin aluminum nitride films by reactive RF magnetron sputtering on various substrates: SiO2, poly-Al(111), poly-Pt(111), Si(100), Si(111). A topology electrode cell technology and their application on aluminum nitride films for MEMS functional organization. Product Description popup.authors Богдан Олександр Володимирович Богдан Тетяна Зіновіївна Дейнека Іван Сергійович Зеленська Марина Олександрівна Зеленський Сергій Васильович Коваль Вікторія Михайлівна Красонтович Михайло Юрійович Лупина Борис Іванович Орлов Анатолій Тимофійович Пашкевич Геннадій Андрійович Петрищев Олег Миколайович Пономарьова Тетяна Миколаївна Співак Віктор Михайлович Чугаєв Андрій Петрович Яновська Юлія Юрієвна popup.nrat_date 2020-04-02 Close
R & D report
Head: Yakimenko I. Yuri. Development of technology for oriented films of aluminum nitride piezoelectric properties for the functional organization of MEMS-structures composed of nanoelectronic cells.. (popup.stage: ). Research Institute of Applied Electronics of Natoinal Technical University of Ukraine "KPI". № 0211U009423
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