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Information × Registration Number 0211U009797, 0111U010376 , R & D reports Title Development of technology for passivating the front surface of diode cells and technology of deposition of antireflecting coatings popup.stage_title Head Klyui Mykola Ivanovich, Registration Date 27-12-2011 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 The technological equipment for current-voltage characteristics measuring and plasma treatment and deposition of diamond-like carbon films on the work surface of multi-junction silicon solar cells (MJ Si-SC) was developed and produced. The technology of passivation and antireflection of front surface of MJ Si-SC with vertical diode cells by plasma treatments and deposition of diamond-like amorphous carbon films. It was shown that additional treatment in argon plasma can improve parameters of MJ Si-SCs more than just hydrogen treatment and combined treatment, which includes processing in hydrogen plasma and deposition of diamond-like carbon films on the work surface of MJ Si-SC allows to improve their photovoltaic properties by 1,3-1,4 times. The test samples (10 pcs.) of BP Si-CE were manufactured and delivered to the Customer. Product Description popup.authors Заяць Микола Сергійович Кисельов Віталій Семенович Кладько Василь Петрович Клюй Микола Іванович Костильов Віталій Петрович Лозінський Володимир Борисович Лук'янов Анатолій Миколаєвич Макаров Анатолій Володимирович Сіренко Олексій Олександрович Северінова Ірина Дмитрівна Семененко Микола Олександрович Скляренко Ганна Іванівна Темченко Володимир Павлович Тисяченко Алла Корніївна Юхимчук Володимир Олександрович popup.nrat_date 2020-04-02 Close