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Information × Registration Number 0212U001388, 0110U006271 , R & D reports Title Development and introduction of formation technology of the unstressed uniform silicon ingot. popup.stage_title Head Litovchenko Vladimir Grygorovych, Registration Date 02-02-2012 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 ABSTRACT. Report on R & D: 37 p., 16 figures, 6 tables, 30 sources. The objects of research - silicon structures implanted by impurity ions and subjected gettering and thermal procedures. Purpose - Search of the standards for the characterization of solar silicon, analysis and adaptation of techniques, metrology and certification of basic facilities. The literature on methods of obtaining silicon material for solar energy and methods of its characterization have been look for. The analysis of international standards for certification of silicon, choosing the set of standards for measuring of the basic parameters of silicon that provide high efficiency of solar photoconverters. In accordance with standards the attestation of units for measuring of lifetime of the minority nonequilibrium charge carriers, x-ray diffraction, infrared spectroscopy have been performed. Silicon wafers of different manufacturers have been selected. The methods for the basic characterization parameters of silicon were tested on these wafers and studied: - oxygen and carbon content; - the lifetime of minority nonequilibrium charge carriers; - structural perfection; - structure of the surface damaged layer; - impurity composition; - the value of stress. Product Description popup.authors Євтух Анатолій Антонович Кладько Василь Петрович Лісовський Ігор Петрович ЛитовченкоВолодимир Григорович Романюк Борис Миколайович popup.nrat_date 2020-04-02 Close