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Information × Registration Number 0212U001818, 0110U006409 , R & D reports Title Studying impurities redistribution and creation of structural defects due to impurities effect during directional crystallization of silicon by the methods of mathematical simulation. popup.stage_title Head Kovtun Genadiy Prokopovich, Registration Date 23-03-2012 Organization National Science Center "Kharkiv Institute of Physics and Technology popup.description2 Report on the research: __ p., __ illustrtions, __tables, __annex., __ references.The objective is determination of optimal thermal conditions and ultimate content of admixture elements in single crystal and multicrystal silicon during its refinement by the method of oriented crystallization, and investigation of structural defects created by impurities in Si. The single crystal and multicrystal silicon in-tended for photoelectric converters were used as subject of investigations. Mathematical and computer simulation was used as the method of investigation. The op-timal thermal conditions to produce solar grade silicon were determined. Redistribution of metal impurities as well as boron, oxygen, phosphor and carbon in single crystal and multicrystal silicon during refinement by the methods of directional solidification have been investigated. The structural defects created by impurities in solar grade silicon have been studied. Product Description popup.authors Даценко Ольга Анатольївна Кондрик Олександр Іванович popup.nrat_date 2020-04-02 Close