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Information × Registration Number 0212U002089, 0111U004957 , R & D reports Title Forming regularities and properties of nanomaterials based on porous silicon and multinanolayers, synthesized by ionic deposition technology popup.stage_title Head Skryshevsky Valery, Доктор фізико-математичних наук Registration Date 23-01-2012 Organization Taras Shevchenko Kiev university popup.description2 Physical principles of creating composite nanostructures by ion layers in the pores of porous silicon were developed. The several hydrated oxides, hydroxides, fluorides and sulphides of metals were used for pore filling. Dimensions and properties of the synthesized nanoparticles are determined by capabilities of size midification and topology of the pore matrix environment. The applied electrochemical technique enables the formation of matrix environment on the basis of porous silicon for further synthesis of semiconductor nanoparticles with different size and topology. The influence of morphology and structure of porous silicon multilaers on electrical properties and transport processes of charge carriers were studied. The study of tensoresistive and photoacoustic effects allowed to find the certain features in optical and thermal properties of porous silicon layers. Product Description popup.authors Іванов Іван Іванович Гаврильченко Ірина Валеріївна Келембет Віктор Якимович Кильчицька Тетяна Сергіївна Козинець Олексій Володимирович Кузнецов Геннадій Васильович Литвиненко Сергій Васильович Мілованов Юрій Сергійович Манілов Антон Ігоревич Сердюк Тетяна Володимирівна Скришевський Валерій Антонович Циганова Ганна Іскаківна Шулімов Юрій Григорович popup.nrat_date 2020-04-02 Close