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Information × Registration Number 0212U002150, 0111U010510 , R & D reports Title Formation and stabilization of NiSi silicide nanodimensional films on monocrystalline silicon popup.stage_title Head Makogon Iuriy Mykolayovich, Registration Date 26-01-2012 Organization Faculty of аircraft and space systems NTUU "KPI" popup.description2 It was investigated the condition of thermostable nanoscaled NiSi films diffusion formation. The stabilization was producted by the way of alloying nickel film during codeposition of Ni with Pt or due to the use additive layers as diffusion barriers and sourse of alloying elements for optimization of interdiffusion rates of Ni and Si atoms during annealing. Pt, Ti, C layers were used as regulators of diffusion processes. Annealing atmosphere and location of additive layers essentially influence on development thermal-activated solid-state reaction of silicide phases in Ni/Si(001) NFC. It was installed that NiSi silicide existence during annealing in vacuum to higher temperature was connected with that oxigen of residual atmospher penetrating into nanoscaled film composition along grain boundaries, crystalline structure defects. It is blocked interdiffusion of nickel and silicon atoms in this way increasing the temperature of NiSi2 nucleation. It was installed that introduction of Ni interlayer as diffusion-controlled membranes between Pt films and Si substrate in Pt(10 - 50 nm)/Ni(10 - 30 nm)Si/(001) NFC is decreased of Si in Pt diffusion effective coefficient on order that is displayed in decrease of PtSi temperature of formation on 100К (from 870 to 770 К). The introduction of Pt interlayer as diffusion-controlled membrane between Ni films and Si substrate is stabilized NiSi phase up to 1120 К due to NiSi-PtSi solid solution formation that increases power barrier for NiSi2 nucleus formation. The analogical stabilization of NiSi silicide up to 1170 К is observed in [(Ni + Pt) 30 nm]/Si(001) NFC with Pt alloying element concentration of 0,73; 3,35; 8,24; 19 at.%. In result of Ti diffusion introduction from surface layer of Ti (5 nm)/Ni(10 nm)/Si(001) NFC NiSi thermal stability is increased up to 1070 К during annealing in nitrogen atmosphere. The introduction of Ti(5 nm), C(2 nm) interlayers as diffusion-controlled membranes between nickel layer and substrate is delayed Ni diffusion in zone of solid-state reaction, that is displayed in appearance after annealing in flowing nitrogen at 770 К due to insufficient quantity (Ni), NiSi2 disilicide as first phase without of intermediate silicide nickel phases formation. Product Description popup.authors Вербицька Т.І.. Макогон Юрій Миколайович Павлова Олена Петрівна Сидоренко С.І. popup.nrat_date 2020-04-02 Close