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Information × Registration Number 0212U004256, 0109U002240 , R & D reports Title Patterns of influence isovalent impurities on physical properties of wide-gap semiconductors have been found. popup.stage_title Head Makhniy Victor Petrovitch, Registration Date 01-02-2012 Organization Yuri Fedkovych Chernivtsi National University popup.description2 Comprehensive study of structural, electrical, photovoltaic, optical and luminescent properties of isovalent-doped wide-gap II-VI compounds and diode structures based on them were studied. The basic mechanisms of defect formation and flow of transport and generation-recombination processes in research facilities were established. It was found that isovalent doping-effective materials actually radiation boundary with abnormally low temperature coefficient changes its intensity. Revealed that the most characteristic feature samples of nano-size structures is the presence of luminescence bands in the energy region larger than the width of the band gap semiconductor that is adequately explained in the theory of quantum-size effects. The possibility of practical using in functional electronics specific isovalent-doped materials and diode structures are founded. Product Description popup.authors Івасюк Лідія Семенівна Герман Іванна Іванівна Кінзерська Оксана Володимирівна Махній Віктор Петрович Мельник Володимир Васильович Савчук Сергій Андрійович Скрипник Микола Володимирович Сльотов Михайло Михайлович Ульяницький Констянтин Сергійович Хуснутдінов Сергій Володимирович popup.nrat_date 2020-04-02 Close