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Information × Registration Number 0212U004898, 0111U003919 , R & D reports Title Development of the technology for deposition of nanocrystalline silicon carbide films for the production of high- stability temperature sensors on their base popup.stage_title Head Lopin Aleksandr Vladimirovich, Registration Date 07-02-2012 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 Investigated are the electronic properties of nc-SiC films and the influence of the boundary regions of the nanocrystals on these properties. In annealed nc-SiC layers with contrast nanocrystal interface surfaces there are observed photoluminescence bands in the range of 1-1.7 eV. Nonliner I-V characteristics and mechanisms of the formation of heterostructures on the base of nc-SiC are studied in detail. A temperature sensor based on nc-SiC layers is developed and produced, its electrical parameters are studied in -196 -- +400 centigrade range. Product Description popup.authors Козловський Анатолій Анатолійович Семенов Олександр Володимирович popup.nrat_date 2020-04-02 Close